# Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence

> Low-energy cathodoluminescence (CL) is highly sensitive to ion implantation damage, making it useful for optimizing Beta-Ga2O3 devices.

Source: https://covalent.com/resource-library/evaluation-of-damage-formation-and-recovery-in-ion-implanted-beta-ga2o3-by-low-energy-cathodoluminescence/
Updated: 2026-05-04T23:27:10+00:00

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# Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence

 [![Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence](https://spcdn.shortpixel.ai/spio/ret_img,q_cdnize,to_auto,s_webp:avif/covalent.com/wp-content/uploads/2023/10/Evaluation-of-Damage-Formation-and-Recovery-in-Ion-Implanted-Beta-Ga2O3-by-Low-Energy-Cathodoluminescence.jpg)](https://covalent.com/wp-content/uploads/2025/09/trc-sman-en-202109-dc-04-p02260.pdf)

Dec 22, 2021

Ion implantation and annealing are important process in device manufacturing. Low-energy cathodoluminescence (CL) is highly sensitive to the damage caused by ion implantation and suitable for process optimization and [failure analysis](https://covalent.com/solutions/failure-analysis/) in Beta-Ga2O3 based devices.

[Click here to download the Whitepaper](https://covalent.com/wp-content/uploads/2025/09/trc-sman-en-202109-dc-04-p02260.pdf)

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