# Evaluation of Defects in Si-Based Power Devices by Cathodoluminescence (CL)

> This white paper describes the use of Cathodoluminescence in SEM for failure analysis and process optimization of semiconductor devices.

Source: https://covalent.com/resource-library/evaluation-of-defects-in-si-based-power-devices-by-cathodoluminescence-cl/
Updated: 2026-05-07T22:51:20+00:00

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# Evaluation of Defects in Si-Based Power Devices by Cathodoluminescence (CL)

 [![Evaluation of Defects in Si-Based Power Devices by Cathodoluminescence (CL)](https://spcdn.shortpixel.ai/spio/ret_img,q_cdnize,to_auto,s_webp:avif/covalent.com/wp-content/uploads/2023/10/Evaluation-of-Defects-in-Si-based-Power-Devices-by-Cathodoluminescence-CL.jpg)](https://covalent.com/wp-content/uploads/2025/09/trc-sman-en-202109-dc-03-p02268.pdf)

Dec 22, 2021

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been investigated for next-generation power devices. However, silicon (Si) is still the most important semiconductor. Failure analysis and process optimization by cathodoluminescence (CL) are presented.

[Click here to download the Whitepaper](https://covalent.com/wp-content/uploads/2025/09/trc-sman-en-202109-dc-03-p02268.pdf)

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