Reciprocal Space Mapping of Epitaxial Nanowires

The growth dynamics, and the ultimate electronic band structure-hence the physical properties-of self-assembled epitaxial semiconductor nanowires and dots depends on the strain states of epitaxial thin films, which are functions of composition, morphology, and relaxation. High-resolution X-ray reciprocal space mapping (RSM) provides a nondestructive, yet quantitative, technique for the characterization of the strain, composition, and morphology of multi-dimensional nanowire or nanodot arrays. Rigaku’s new Smartlab automated diffractometer (Figure 1) makes reciprocal space mapping at medium, high, and very high resolution much easier and faster with minimal user interference.