What Is Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)?
Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS or d-SIMS) is an ultra-sensitive surface analysis technique that determines the elemental and isotopic composition of solid materials. Known for its sensitivity and resolution, d-SIMS is a trusted method to measure dopants and trace elements, including light elements and even hydrogen.
Ultra-Sensitive
Detection
Ultra-Sensitive
Detection
Dynamic SIMS identifies trace elements and isotopes down to parts-per-billion levels, including light elements and hydrogen.
Depth Profiling
Depth Profiling
Measures elemental and isotopic composition across sample layers, ideal for thin films, interfaces, and layered structures.
Quantitative Analysis
Quantitative Analysis
Provides reliable quantitative data with high reproducibility when calibrated standards are used, supporting precise material characterization.
Why Use Dynamic SIMS?
Dynamic SIMS offers a powerful combination of high sensitivity, depth profiling, and quantitative analysis, making it an essential tool for material characterization. By sputtering the sample surface with a focused ion beam and analyzing the ejected secondary ions, the technique provides detailed information on elemental and isotopic composition across different sample layers. This allows for precise measurement of trace elements and dopants, even at parts-per-billion levels, while generating depth profiles for thin films, interfaces, and layered structures.
Dynamic SIMS is particularly valuable in applications where both surface and subsurface composition matter, including semiconductors, energy research, materials science, and geology, helping researchers and engineers gain actionable insights into complex materials.
Comprehensive Insight
Dynamic SIMS analyzes a wide range of elements and isotopes for in-depth material understanding.
Versatile Applications
Applicable across semiconductors, energy research, materials science, geology, and biomedical fields.
High-Resolution Profiling
Delivers nanometer-scale lateral resolution and depth profiling, enabling detailed complex materials characterization.
Working Principle
Dynamic SIMS (d-SIMS) involves bombarding a sample with a focused ion beam-typically O₂⁺, Cs⁺, or Ar⁺-to sputter surface material and generate secondary ions for analysis. A mass spectrometer analyzes these ions to identify elements and create a depth profile of elemental concentrations. Unlike ToF-SIMS, which uses pulsed low-current ions and measures flight times, d-SIMS employs a continuous high-current beam and filters ions by mass using magnetic or quadrupole analyzers.
d-SIMS offers high sensitivity, detecting elements down to parts per billion, and excellent depth resolution, which is ideal for analyzing thin films, interfaces, and layered structures.
Equipment Used for Dynamic SIMS:
IMC 7f – Cameca
At Covalent, we use the leading provider of dynamic SIMS solutions: the IMC 7f—Cameca. Cameca’s IMS xf SIMS product line is designed for high-precision elemental and isotopic analysis and is optimized for demanding materials like glass, metals, and ceramics. This latest model offers exceptional depth profiling and a wide dynamic range.
The Cameca has a high-transmission mass spectrometer and two reactive, high-density ion sources for fast sputtering and excellent detection limits. The device also features a unique optical system for direct ion microscopy and scanning and microprobe imaging.
The Cameca device supports report operation and allows 24-hour usage with minimal human intervention. It also provides ultimate reproducibility with relative standard deviation (RSD) below 0.5%.
Key Differentiators
| Property | Dynamic SIMS |
|---|---|
| Surface Sensitivity | Few nm |
| Elemental Detection Range | All elements and isotopes |
| Mass Range | From 1 to >10,000 atomic mass units |
| Resolution | Mass resolution: 25000 ppm |
| Typical Detection Limit | On the ppb level |
| Parallel Detection | Up to 7 masses |
| Quantification | Quantitative with relevant reference |
| Chemical State Information | Limited |
| Molecular Detection | Yes |
| Imaging Capability | Limited to ion spot size |
| Lateral resolution | 1mic |
| Depth Profiling | Up to 10 microns profiling |
| Depth Resolution | ~1nm |
| Sputter Rate | Up to 0.5mic/min |
| Destructive Analysis | Yes |
| 3D analysis | Combines spatial and depth information for 3D chemical reconstruction |
Strengths
- Broad elemental/isotopic coverage with wide mass range (1 to >10,000 amu): Supports detection of virtually all elements and their isotopes for comprehensive materials characterization.
- Parallel detection of up to 7 masses enables efficient targeted analyses: Simultaneously tracks multiple elements or isotopes to improve throughput and consistency.
- High reproducibility and stability (RSD < 0.5%) for consistent results: Instrument stability and calibrated workflows deliver highly repeatable measurements.
Limitations
- Quantification requires specific standards because matrix effects cause an element’s signal intensity to depend on the surrounding material, making direct comparison between different samples unreliable.
- Depth Profiling is Destructive: Obtaining depth profiles requires sputtering (removing) material, which inherently alters the sample.
- Limited Chemical Information: d-SIMS primarily provides information about the elemental and molecular composition of a surface. It offers limited information about the chemical state or bonding environment of the detected species.
Unsure Whether Dynamic SIMS Is Right for You?
Get ultra-sensitive answers on dopants, trace elements, and isotopes, even hydrogen.
Sample Information
What we accept:
- UHV-compatible.
- Flat and clean surfaces are preferred.
- Sample size of 1 in. (2.5cm) diameter, not more than 1 cm height.
Use Cases
Dynamic SIMS is a versatile technique used across industries, from profiling dopants in semiconductors and solar cells, to analyzing trace elements in alloys, nuclear materials, biological tissues, geological samples, and even forensic or environmental evidence, thanks to its excellent sensitivity and depth profiling capabilities.
Materials Science
- Depth Profiling: Measures composition at various sample depths, crucial for studying thin films, layers, and coatings.
- Elemental Analysis: Identifies the presence and location of elements and their isotopes.
Energy & Battery Research
- Depth Profiling: Characterizes the distribution of elements and impurities within battery electrodes.
- Solid Electrolyte Testing: Examines trace dopants and contaminants in solid electrolytes.
Semiconductors
- Dopant Profiling: Measures dopant concentrations within semiconductor structures.
- Impurity Detection: Detects trace contaminants and defect sites in microelectronic devices.
Complementary Techniques
- GDOES (Glow Discharge Optical Emission Spectroscopy): GDOES offers much faster sputtering and robust quantitative depth profiling with lower sensitivity, whereas d-SIMS provides ultra-high sensitivity and depth resolution for trace and isotopic analysis.
- ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry): Can detect all elements simultaneously with high resolution. It complements d-SIMS in detecting unknown materials, complex molecular fragments, and contamination with high mass resolution.
- XPS (X-ray Photoelectron Spectroscopy): Provides quantitative elemental and chemical state information of the sample. It complements d-SIMS by performing fast quantitative measurements to identify material, oxidation states, and chemical bonding environments, which d-SIMS does not directly measure.
Glow Discharge Optical Emission Spectroscopy (GDOES)
Sputters surfaces to quantify composition & depth-profile layers. Explore
Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS)
Ultra-sensitive surface analysis with chemical imaging & depth profiling. Explore
X-ray Photoelectron Spectroscopy (XPS)
Measures surface elemental composition and chemical states. Explore
Why Choose Covalent for Your Dynamic SIMS Needs?
At Covalent Metrology, we offer industry-leading SIMS capabilities, featuring advanced instrumentation with precision. Our robust depth and concentration calibration protocols also ensure accurate results.
We offer rapid turnaround times and tailored sample preparation services to meet your needs. At Covalent, our expert staff has extensive experience in surface science, which allows us to deliver intuitive data.
Contact us today to learn more about Covalent’s depth of capabilities in Dynamic SIMS and other SIMS analyses and how we can work together today.
Frequently Asked Questions
Identifying the right test can be complex, but it doesn’t have to be complicated.
Here are some questions we are frequently asked.
Is Dynamic SIMS destructive?
Yes. The technique is destructive by nature. It involves sputtering away the material layer by layer while measuring the ejected ions.
Can SIMS analyze insulating samples?
Yes. Insulating samples are measured using charge compensation techniques. In extreme cases, the sample may be covered by the conductive layer.
How is quantification achieved with d-SIMS?
Quantification requires calibrated standards to calculate relative sensitivity factors (RSFs) specific to the element and the matrix.
What is the smallest feature size that d-SIMS can analyze?
The lateral resolution is ~1 micron.
Can you analyze biological samples?
Yes, after appropriate preparation (fixation, dehydration, embedding), biological samples can be imaged and quantified. The customer is responsible for sample preparation.
