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Total Reflection X-ray Fluorescence (TXRF)

TXRF is a surface sensitive elemental analysis technique used to determine the concentration of trace metal contamination on wafer surfaces.

What is Total Reflection X-ray Fluorescence?

Total Reflection X-ray Fluorescence (TXRF) works by directing a collimated X-ray beam at a shallow, grazing angle onto a sample surface, typically a silicon wafer. At this low incident angle, total external reflection occurs, which restricts interaction to the near surface of the wafer. This minimizes background noise and enhances sensitivity to trace elements present on the surface. When atoms on the wafer surface are excited by the X-ray beam, they emit characteristic fluorescent X-rays, which are then detected and analyzed. The concentration of elements is quantified using reference standards.

Atomic-Scale Resolution

Detection Limit

Detects ultra-trace elemental contamination down to ~1E10 atoms/cm² on wafer and thin film surfaces

Multi-Mode Imaging

● Analysis Type

Provides non-destructive analysis with high sensitivity for surface and near-surface regions

Comprehensive Material Analysis

Wafer Compatibility

Compatible with standard 200 mm and 300 mm wafers; enables rapid, automated full-wafer mapping

Why Use Total Reflection X-ray Fluorescence?

TXRF is highly surface-sensitive and ideal for detecting trace metal contamination near the sample surface, because grazing incidence X-rays interact only with the top few nanometers of the sample.

The TXRF-V310 features automatic wafer handling, contamination mapping, and advanced software capable of quantifying elements at or below 1E10 atoms/cm². Its high sensitivity and repeatability enable analysis of cleaning processes, tools, and process contamination with greater accuracy and efficiency.

Surface Sensitivity

TXRF detects trace metal contamination confined to the top few nanometers of the sample, making it ideal for surface analysis.

Automation & Mapping

Advanced systems, such as the TXRF-V310, offer automated wafer handling and full-surface contamination mapping for increased throughput and precision.

Quantitative Accuracy

Capable of quantifying elements at or below 1E10 atoms/cm², TXRF delivers high sensitivity and repeatability for reliable contamination monitoring.

Covalent offers TXRF for nano-scale crystallography

Covalent Capabilities

How Total Reflection X-ray Fluorescence Works

Total Reflection X-ray Fluorescence (TXRF) works by directing a collimated X-ray beam at a shallow, grazing angle onto a sample surface, typically a silicon wafer. At this incident angle, total external reflection occurs, restricting interaction to the near surface of the wafer. This minimizes background noise and enhances sensitivity to trace elements on the surface. When atoms on the wafer surface are excited by the X-ray beam, they emit characteristic fluorescent X-rays. These are then detected and used to quantify element concentrations using reference standards.
  • Analytical Depth: TXRF provides quantitative information on elemental composition at the near-surface region of a sample, typically within the top few nanometers.
  • Material Compatibility: This technique is compatible primarily with 200 mm and 300 mm semiconductor wafers. While silicon wafers are primarily analyzed other compound semiconductors can also be analyzed.
  • Spatial Resolution: While TXRF does not offer high spatial resolution like imaging techniques, it can map contamination patterns across sample surfaces using automated stage movement with a resolution on the order of 5 -10 mm.
  • Depth Profiling: TXRF is primarily a surface-sensitive technique and does not perform depth profiling for layered material analysis; it focuses on detecting elements at or near the surface.

Equipment Used for Total Reflection X-ray Fluorescence:

Rigaku TXRF V310

  • Elemental detection range: Na (Z=11) to U (Z=92)
  • Detection limit: Approximately 1E10 atoms/cm² (element-dependent)
  • Compatible wafer sizes: 200 mm and 300 mm
  • Atmosphere: Vacuum or helium purge
  • Measurement modes: Single-point, multi-point, and mapping analysis
  • Software: Automated element quantification and contamination trend analysis
  • High-power W-anode X-ray source (9 kW rotating anode)
  • Three excitation energies optimized for light, transition, and heavy elements
  • XYθ sample stage for precise positioning
  • Dual FOUP (Front Opening Unified Pod) load ports
View Spec Sheet
JEOL JEM-F200 multi-purpose electron microscope with cold-field emission gun for ultra-high spatial resolution and advanced EELS spectroscopy

Key Differentiators

TXRF is a technique distinguished by its exceptional surface sensitivity, ultra-trace detection limits, and non-destructive measurement, but it also has key technical constraints.

Strengths

  • Ultra-trace sensitivity (detects as low as 1E10 atoms/cm²)
  • Non-destructive analysis of wafer surfaces
  • Requires minimal sample preparation
  • High throughput enabled by automated wafer handling
  • Offers excellent repeatability and reproducibility
  • Wide elemental detection range (from Na to U)
  • Enables contamination mapping and site-specific measurements

Limitations

  • Primarily surface-sensitive; not suitable for bulk analysis
  • Requires flat, reflective wafer surfaces
  • Performance may be hindered by thick films or rough surfaces
  • Offers limited lateral resolution compared to microscopy techniques
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Unsure Whether TXRF Is Right for You?

Learn more about using Total Reflection X-ray Fluorescence services today.

Sample Information

High-resolution HAADF and OBF-STEM imaging of electron-beam-sensitive materials

Map of the magnesium contamination across a wafer surface

Atomic-resolution elemental mapping using EDX at AlAs/AlGaAs interface, showing atomic diffusion with color-coded distribution for aluminum, gallium, and arsenic

Map of Iron and Cobalt contamination across a wafer surface

What we accept:

  • Samples must have flat, polished surfaces (e.g., silicon wafers)
  • Compatible wafer sizes: 200 mm and 300 mm
  • Surfaces must be free of debris and water droplets
  • Surface must be dry and free of particles
  • Compatible with materials used in semiconductor processing
semiconductor

Use Cases

Semiconductor

The main application of TXRF is ultra-trace, non-destructive elemental contamination monitoring of semiconductor wafers and thin films.

Complementary Techniques

  • Wavelength Dispersive XRF (WDXRF) and Energy Dispersive XRF (EDXRF): Provide complementary elemental analysis with sensitivity to both bulk and surface layers.
  • Secondary Ion Mass Spectrometry (SIMS): Offers high-sensitivity elemental analysis for both surface and bulk materials.
  • Time-of-Flight SIMS (TOF-SIMS): Offers high-sensitivity analysis of organic contamination on wafer surfaces.
  • X-ray Photoelectron Spectroscopy (XPS): Provides complementary chemical state analysis of surface elements.
  • Particle Surface Contamination Inspection (PSC): Identifies and quantifies particle contamination on wafer surfaces.

Scanning Electron Microscopy (SEM)

Images surface topography and composition with electrons. Explore

Scanning Transmission Electron Microscopy (STEM)

Provides atomic-scale imaging and spectroscopic mapping. Explore

X-ray Diffraction (XRD)

Non-destructive analysis of crystal phases, lattice, and strain. Explore

Frequently Asked Questions

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