NanoSIMS 50L has the highest spatial resolution of secondary ion mass spectrometry, and can perform imaging analysis with high sensitivity and mass resolution. Here, we introduce the cross-sectional analysis of SiC-MOSFET using NanoSIMS and SCM.
Dopant Carrier Distribution Analysis for SiC-MOSFET
This white paper summarizes how the high spatial resolution of the NanoSIMS 50L system facilitates dopant carrier distribution analysis.