What is Nanoprobing?
Nanoprobing is an in-situ technique that uses ultra-fine probe tips to make direct electrical contact with microscopic features inside an electron microscope. By positioning probes onto specific device structures under high magnification, engineers can measure local electrical behavior—such as current–voltage (I–V) response—at the region of interest.
Unlike traditional optical probe stations, nanoprobing is performed inside an SEM or dual-beam system, allowing you to see with higher precision where the probes are landing and the landing force. This enables direct correlation between a device’s physical structure and its electrical performance while preserving the features, which is critical for advanced semiconductor failure analysis and device debugging.
In practice, nanoprobing turns the microscope from a purely imaging, spectroscopy, and crystal structure tool into a functional test platform—letting you not only find a feature or defect, but also determine how it behaves electrically in real time.
Localized Electrical Behavior
Measure electrical behavior where you see the feature, defect, or structure of interest inside the microscope.
Compatible with SEM and Dual Beam Workflows
Use nanoprobing alongside high-resolution imaging, tilt-based workflows, and site-specific failure analysis methods.
Flexible, Modular Platform
Adapt the system for different samples, chambers, and applications with configurable probe count, accessories, and software-guided workflows.
Why use Nanoprobing?
Nanoprobing adds direct electrical interaction to the same SEM workflow already used for imaging, navigation, and site-specific analysis. Instead of stopping at visual/elemental/crystallographic inspection, you can land probes on structures of interest and measure how a device behaves electrically at the nanoscale.
See, Contact, Measure
Visually navigate to a feature, land probes with precision, and immediately measure electrical response at that location.
Fast Approach, Precise Landing
Move quickly across the sample with coarse positioning, then switch to nanometer-scale control for accurate and repeatable probe contact.
Stable Measurements Over Time
Maintain reliable electrical contact on small structures for extended measurements, even under tilt and high-resolution imaging conditions.
Covalent offers advanced in-situ nanoprobing for semiconductor failure analysis, electrical characterization, and device debugging.
Working Principle
Nanoprobing operates by bringing ultra-fine conductive probe tips into direct contact with specific features on a sample inside an electron microscope. Using high-resolution SEM or dual-beam imaging for navigation, the user first locates the region of interest—such as a transistor gate, interconnect, or suspected defect site—then positions the probes with nanometer-scale precision using multi-axis manipulators. Coarse motion enables rapid positioning across the sample, while fine motion allows controlled, gentle landing of the probe tips onto targeted structures without damaging them.
Once contact is established, electrical measurements such as current–voltage (I–V) response, resistance, or continuity can be performed in situ. Because the process occurs inside the microscope, the probe location is visually confirmed, enabling direct correlation between physical structure and electrical behavior. This integration is what distinguishes nanoprobing from traditional probe stations: instead of testing blindly at predefined pads, users can interrogate specific nanoscale features, defects, or interfaces in real time, and immediately connect what they see to how the device performs
Equipment used for Nanoprobing:
We use the Talos™ F200X G2 TEM with Super-X EDS system for DPC and other Transmission Electron Microscopy needs.
Platform type: integrated into our JEOL FIB SEM.
Core motion concept: Compact mobile nanoprobers with independent multi-axis control
Degrees of freedom: 4 degrees of freedom per nanoprober
Probe count: 4
Positioning resolution: Nanometer-scale fine positioning
Coarse motion range: Up to centimeter-scale travel for rapid approach to the region of interest
Fine motion range: Up to ~15 µm at the probe tip for precise contact landing
Working conditions: Compatible with short working distances, low accelerating voltage imaging, and high-resolution magnetic-lens imaging conditions
Tilt compatibility: Supports tilt-compatible workflows, with stable contact maintained at angles used for FIB operations
Probe tips: Industry-standard tungsten probe tips, with very fine tip-radius options
Software: Integrated control software for probe positioning, measurement setup, workflow guidance, data handling, and reporting
Key Differentiators
TXRF is a technique distinguished by its exceptional surface sensitivity, ultra-trace detection limits, and non-destructive measurement, but it also has key technical constraints.
Strengths
- Direct electrical testing at the site of interest
- Real-time correlation between structure and electrical behavior
- Nanometer-scale probe placement for localized measurements
- Compatible with SEM and dual-beam workflows
- Useful for films, particles, transistors, interconnects, defects, and failure-analysis studies
- Stable contact for extended in-situ electrical measurements
- Flexible platform for a wide range of microelectronic and research devices
Limitations
- Stable contact can be difficult on very small, oxidized, contaminated, or highly topographic features
- Better suited for targeted analysis than high-throughput production testing
- Requires exposed or accessible structures for reliable probe landing
- Measurement quality depends heavily on sample condition, geometry, and operator setup
- Often most effective when combined with correlative imaging or cross-sectioning workflows
Unsure whether nanoprobing is right for you?
Nanoprobing enables direct, localized electrical measurements at the site of interest inside the SEM—ideal for failure analysis, device debugging, and nanoscale electrical characterization.
Sample Information
Figure 1 – Probing at exposed alumina parts to investigate low ohmic VIA chains.
Figure 2 – Resistivity measurement of VIA chains.
Figure 3 – Electrical probing of a single PMOS transistor.
Figure 4 – Transistor characteristics: I/V curves function of different gate voltage potentials.
Measurement success depends on surface and sample preparation. We can help with sample preparation.
What we accept:
- Solid phase.
- Must be vacuum stable.
- Maximum Sample Height: 55 mm.
- Maximum Sample Weight: 500 g (including sample-holder).
- Maximum Lateral Dimension: 150 mm (larger samples enabled with reduced rotation).
Use Cases
Semiconductor Failure Analysis
Nanoprobing is used to electrically interrogate localized areas of a failing device, helping connect electrical behavior to the physical site under investigation.
Device Characterization and Debug
Supports in-situ I–V measurements on microelectronic structures to evaluate local device behavior and compare suspect vs. nominal regions.
FIB Delayering to Probe Buried Structures
Delayer the sample and probe exposed surfaces in one tool.
Research Materials and Micro/Nanodevices
Nanoprobing can also be used for localized testing of MEMS, sensors, nanowires, thin films, nanoparticles, graphene, microLEDs, solar cells, and other research-scale devices where direct electrical access under the microscope is valuable.
Correlative Probing with FIB or SEM Review
Combine imaging, probing, and follow-on analysis such as FIB cross-sectioning for deeper root-cause investigation.
Thin Film 4 Point Probe
Investigate sheet resistance in thin films.
Complementary Techniques
- FIB-SEM / Dual Beam: Site-specific cross-sectioning and structural analysis
- TEM: Atomic-scale structural characterization after localization
- EDS: Elemental analysis at the probed location
- Optical Microscopy: Initial navigation and overview inspection
- AFM: Nanoscale surface and topography analysis
- SIMS or XPS: Chemical and compositional analysis when needed
Why Choose Covalent for Nanoprobing?
Frequently Asked Questions
Identifying the right test can be complex, but it doesn’t have to be complicated.
Here are some questions we are frequently asked.
What is nanoprobing used for?
Nanoprobing is used to contact small device features and measure local electrical behavior directly inside a microscope.
What makes nanoprobing different from a traditional probe station?
Nanoprobing allows you to see and contact features at high magnification inside the SEM or FIB, enabling precise correlation between structure and electrical behavior.
Can nanoprobing be used with FIB workflows?
Yes. Nanoprobing systems are compatible with tilted geometries used in FIB workflows, enabling correlative analysis and in-situ workflows at the same site of interest.
What kinds of samples can be tested?
Semiconductor devices, interconnects, MEMS, nanowires, thin films, sensors, optoelectronic devices, and other solid-state structures that can be accessed in the microscope.