Ion implantation and annealing are important process in device manufacturing. Low-energy cathodoluminescence (CL) is highly sensitive to the damage caused by ion implantation and suitable for process optimization and failure analysis in Beta-Ga2O3 based devices.
Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence
Low-energy cathodoluminescence (CL) is highly sensitive to ion implantation damage, making it useful for optimizing Beta-Ga2O3 devices.