Evaluation of Defects in Si-Based Power Devices by Cathodoluminescence (CL)
Dec 22, 2021
Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been investigated for next-generation power devices. However, silicon (Si) is still the most important semiconductor. Failure analysis and process optimization by cathodoluminescence (CL) are presented.