Covalent

Photoluminescence (PL) Spectroscopy

Photoluminescence (PL) spectroscopy measures the luminescence spectrum emitted in response to optical excitation at a specified wavelength. Using a confocal microscope geometry, PL measurements can be performed with high spatial resolution.

What is PL Spectroscopy?

Photoluminescence (PL) spectroscopy is a non-destructive optical characterization technique that probes the electronic structure of materials by measuring the wavelength and intensity of light emitted following laser excitation at a specified wavelength. The resulting emission spectrum provides insights into the material properties. Configured with the geometry of a confocal microscope, PL microscopy enables high-resolution mapping of these properties to assess material uniformity.

Why use PL Spectroscopy?

Photoluminescence (PL) analysis provides a rapid, non-destructive way to evaluate material quality and uniformity. Analyzing PL spectra can reveal information about optical emission characteristics, defects, impurities, and recombination behavior that can impact device performance. Confocal PL microscopy enables high-resolution mapping of the uniformity of these properties along a sample, across a wafer, and through the depth below transparent surfaces.

  • Multiple laser options – Available excitation wavelengths across near-UV, visible, and near-IR
  • Sample mapping – across 300mm wafers or small, high-resolution areas
  • Broad material compatibility – semiconductors, 2D materials, perovskites, and quantum materials.

Identify process-induced changes

Detect variations caused by fabrication, annealing, or packaging processes.

Map wafer non-uniformity

Map spatial variations across thin films, devices, and wafers.

Enable targeted root-cause analysis

Localize material and process variations that can be further investigated with complementary techniques.

How Photoluminescence (PL) Spectroscopy Technique Works

Photoluminescence (PL) spectroscopy measures the light emitted from a material after it is excited with a laser. Different excitation wavelengths can be used to optimize the measurement for specific material systems and optical transitions. The absorbed energy promotes electrons to higher-energy states, and as these electrons relax and recombine, they emit photons with characteristic wavelengths. In a confocal microscope geometry, the emitted light is collected with high spatial resolution, enabling localized analysis of material quality, optical properties, defects, strain, and recombination behavior.

Equipment Used for PL

Our photoluminescence and Raman spectroscopy capabilities span multiple instrument platforms, allowing us to tailor laser excitation wavelength, confocal optics, and measurement conditions to each sample and application. We also integrate these spectroscopy studies with complementary analytical techniques to deliver a more complete understanding of a sample’s composition, structure, defects, and material properties.

Equipment for Photoluminescence (PL) Spectroscopy

Oxford Instruments WITec360 Semiconductor Edition

  • Confocal Raman and photoluminescence (PL) microscope designed for advanced materials and semiconductor characterization
  • Excitation sources:
    • 355 nm.
    • 532 nm.
  • 300 mm wafer capability: Motorized vacuum wafer stage supports automated mapping and characterization of semiconductor wafers up to 300 mm in diameter.
  • TrueSurface™ Topography tracking: Maintains optimal focus across rough, curved, patterned, and non-planar samples by automatically following surface topography.
  • Vibration-isolated platform: enables high stability measurements.
  • Configurable spectral resolution: Multiple spectrometer grating options can support both wide spectral range acquisitions and high-resolution characterization.
Specifications

ThermoFisher Scientific DXR3xi Raman Spectrometer

  • Multiple Excitation Lasers:
    • 455 nm.
    • 532 nm.
    • 785 nm.
  • Laser Power with precision controls: 0.1 mW power increments.
  • Spatial Resolution: Better than 0.5 micron.
  • Confocal Depth Resolution: Better than 2 micron.
  • Maximum image area: 101.6 mm x 76.2 mm.
Specifications

Key Differentiators

  • Excitation in the UV, VIS, and NIR for various sample types.
  • Micron scale information can be obtained.
  • Topography-aware measurements – TrueSurface™ tracking maintains focus across patterned and non-planar semiconductor structures.
  • Integrated analytical workflows – PL results can guide targeted SEM, FIB, TEM, SIMS, XPS, and other follow-on analyses.

Strengths

  • Non-destructive characterization.
  • Can measure samples through glass and other transparent containers.
  • Confocal microscopy provides depth resolution for non-destructive depth profiling into semi-transparent surfaces.

Limitations

  • Laser confocal microscope configuration probes a small spot/volume, around 1um, which requires multiple spots to adequately sample heterogeneous materials. Fast mapping of many particles or locations can be beneficial.
  • For materials with strong absorption at the laser wavelength, this technique may only probe the surface.
  • PL spectroscopy can reveal the presence and distribution of defects, but complimentary techniques will be needed to determine their exact composition or structure.

Example Outputs

Depending on the project, outputs can include raw emission spectra, tables of emission band peak position and intensity, and 1D or 2D scans.

The photoluminescence spectra measured across a GaAs sample can reveal its material uniformity. Here, small shifts in the emission peak trace local variations in strain and composition across the sample, allowing us to map the defect distribution and reveal features from crystal growth.
Photoluminescence and Raman mapping of a diamond sample. The Raman-line map (lower left) is uniform, confirming high-quality diamond across the whole sample, while the map of NV color-center PL (lower right) reveals distinct growth-related bands of varying defect content. Representative spectra (top) are drawn from each band. A single scan resolves both crystalline quality and the spatial distribution of optically active defects.

Sample Requirements

Sample must be stable under laser irradiation; reduced power can be used to mitigate. Strongly absorbing samples can be sensitive.

Photoluminescence (PL) Spectroscopy applications by industry

Semiconductor

Defect mapping, wafer uniformity assessment, epitaxial layer thickness, doping concentrations, process-induced damage evaluation, strain analysis, and failure analysis.

Power Electronics

Defect characterization in SiC and GaN devices, material quality assessment, process optimization, thermal characterization under electrical bias, failure analysis and reliability investigations.

Solar Cells

Defect characterization, material quality assessment, emission uniformity mapping, process optimization, and failure analysis of silicon, III-V, perovskite, and thin-film photovoltaic materials.

2D Materials

Material quality assessment, defect characterization, emission uniformity mapping, and process optimization for atomically thin semiconductor materials and heterostructures.

Photonics & Optoelectronics

Optical emission characterization and development of LEDs, lasers, waveguides, and other photonic materials.

Techniques That Complement PL

Performed on the same instrument platform, Raman spectroscopy complements PL by providing information on material identification, crystal phase, stress/strain, crystallinity, and molecular bonding.
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Provide complementary molecular identification and chemical bonding information, particularly for polymers, organics, and other infrared-active materials.
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Correlates PL features with surface morphology while providing spatially resolved elemental composition.
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Identifies crystal structure, phase composition, crystallinity, and residual stress to complement optical emission measurements.
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Characterizes surface chemistry, oxidation state, and chemical bonding to help explain changes in photoluminescence behavior.
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Reveals crystal defects, dislocations, interfaces, and atomic-scale structure responsible for observed photoluminescence characteristics.
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Why Choose Covalent for Your Photoluminescence Spectroscopy Needs?

Covalent combines advanced photoluminescence instrumentation with a broad portfolio of materials characterization and failure analysis services. Our confocal PL/Raman spectroscopy platforms support multiple excitation wavelengths and configurable spectral acquisition, enabling measurements to be tailored to your specific application.
    Additionally, Covalent helps customers understand the underlying cause of observed behavior. PL results can be integrated with our in-house spectroscopy, profilometry, SEM, XPS, FIB, TEM, and other analytical techniques to accelerate root-cause investigations, process optimization, and materials development efforts.

Frequently Asked Questions

What information does PL provide?

PL analysis can reveal optical emission characteristics, material quality, defect-related luminescence, strain effects, Emission spectra can be reported along with mapping of emission spectra features (e.g. defect luminescence intensity, peak shift due to strain, etc.) to assess spatial variations.

What excitation wavelengths are available?

Across our confocal PL/Raman spectroscopy platforms, laser excitation wavelengths of 355, 405, 532, 638, and 785 nm are available to support a range of semiconductor and advanced materials applications.

Is PL analysis non-destructive?

Yes. PL is generally considered a non-destructive optical characterization technique that preserves the sample for additional testing and analysis. For strongly absorbing or laser-sensitive materials, excitation power can be reduced to minimize localized heating or damage.

What spatial resolution can be achieved?

Depending on the objective and measurement conditions, photoluminescence measurements can achieve spatial resolution of a few microns.

What size regions can be mapped?

Automated measurements can characterize variability at selected locations across individual devices, thin films, coupons, packaged components, and semiconductor wafers up to 300 mm.